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BFU725F/N1,115

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This NPN bipolar transistor is designed for RF applications, operating at 2.8V with a maximum current of 40mA and a power dissipation of 136mW. It comes in a SOT343F package, making it suitable for various electronic projects and circuit designs.

SKU: 298960111974 Category:
Weight:
1.5kg

$0.55

/

pcs

2841 in stock

Estimated delivery time: 7-14 days
* Please note that delivery times may vary based on supplier availability and shipping location.

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Packing Information:
  • Packing Detail: RL1, ST, , 3000
Description

Introducing the High-Performance BFU725F/N1,115 Transistor

The BFU725F/N1,115 is a state-of-the-art NPN bipolar transistor specifically designed for radio frequency (RF) applications. It offers outstanding performance characteristics, making it an ideal choice for a variety of electronic circuitry. This comprehensive product description delves into the specifications, benefits, and uses of the BFU725F/N1,115, providing you with all the information you need to make an informed purchasing decision.

Key Specifications of the BFU725F/N1,115

The BFU725F/N1,115 comes with a set of specifications that cater to the demands of modern electronic applications. Below are the essential features:

  • Transistor Type: NPN Bipolar
  • Operating Voltage: 2.8V
  • Maximum Collector Current: 40mA
  • Power Rating: 136mW
  • Package Type: SOT343F

Benefits of Using BFU725F/N1,115 in Your Electronic Projects

Choosing the BFU725F/N1,115 transistor for your electronic designs offers several advantages:

1. High Efficiency

With a maximum power rating of 136mW, the BFU725F/N1,115 operates efficiently, allowing circuits to perform optimally while minimizing energy loss. This is especially important for portable and battery-operated devices that need to conserve power.

2. Compact Size

The BFU725F/N1,115 is packaged in a SOT343F format, taking up minimal space on your circuit board. This compact design is crucial for modern electronics, where space is often limited.

3. Versatile Applications

This transistor excels in RF applications, making it an excellent choice for transmitters and receivers in communication systems. Its NPN configuration allows for various switching and amplification tasks.

4. Reliable Performance

Operating at 2.8V, the BFU725F/N1,115 is designed for reliability, ensuring that your electronic devices maintain performance even under varying conditions. This makes it ideal for demanding applications.

Applications of BFU725F/N1,115

The BFU725F/N1,115 is specifically designed for use in the following applications:

  • RF Amplifiers: Enhances signal strength in wireless communication.
  • Oscillators: Used in RF oscillators to generate stable frequencies.
  • Switching Circuits: Acts as a high-speed switch for various electronic devices.
  • Signal Modulation: Modulates signals for efficient transmission across short distances.

Technical Details and Performance Characteristics

For engineers and developers looking to maximize the performance of their projects, understanding the technical details of the BFU725F/N1,115 is crucial:

  • Transition Frequency (fT): Excellent transition frequency performance allows effective amplification of RF signals without significant distortion.
  • Noise Figure (NF): A low noise figure enhances the performance of RF amplifiers, suitable for applications requiring high clarity in signal transmission.
  • SoA (Safe Operating Area): This transistor maintains a safe operating area for higher power applications without the risk of thermal runaway.

Why Choose BFU725F/N1,115?

When selecting a transistor for RF applications, the BFU725F/N1,115 stands out for its combination of high efficiency, versatile applications, and reliable performance. Whether you’re designing a new handheld device or developing an RF communication system, this transistor meets the demands of challenging environments.

Quality Assurance and Reliability

The BFU725F/N1,115 undergoes rigorous testing to ensure that each unit meets high-quality standards. This commitment to reliability means you can trust the BFU725F/N1,115 to deliver consistent performance over time.

Conclusion

In summary, the BFU725F/N1,115 is a robust choice for engineers and developers in need of a reliable NPN bipolar transistor for RF applications. With its high operating voltage, compact design, and versatility, the BFU725F/N1,115 delivers performance that fulfills the requirements of modern electronics. Whether working on RF amplifiers, oscillators, or switching circuits, the BFU725F/N1,115 is your go-to solution for high-performance electronic designs.

Don’t forget to incorporate the BFU725F/N1,115 into your next project! For more products in the transistor category, visit our NPN SMD Transistors page.

Additional information
Weight 1.5-5 kg
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