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This NPN bipolar transistor features a dual design, operating at 45V with a maximum current of 0.1A and a power rating of 200mW. Packaged in a compact SOT363 format, it is ideal for various applications requiring efficient signal amplification or switching.
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When it comes to selecting the right transistor for your electronic projects, the BCM847BS-7 emerges as an exceptional option. This NPN bipolar transistor is specifically tailored to meet the rigorous demands of modern electronic applications. Thanks to its robust specifications and efficient performance, the BCM847BS-7 is perfect for a wide range of uses, from low-power amplifiers to various switching applications.
Key Features of BCM847BS-7
The BCM847BS-7 transistor boasts an impressive set of features that make it a valuable component in any electronic designer’s toolkit. Here are some of its standout characteristics:
- Type: NPN
- Maximum Collector-Emitter Voltage: 45V
- Maximum Collector Current: 0.1A
- Power Dissipation: 200mW
- Package Type: SOT363
Why Choose BCM847BS-7?
You may wonder why the BCM847BS-7 is the ideal choice for a variety of electronic projects. Here are several factors that make this transistor a must-have:
- Reliability: The BCM847BS-7 is engineered for stability, ensuring consistent performance in your circuits.
- Versatility: Whether designing amplifiers, oscillators, or switches, the BCM847BS-7 offers the flexibility you need.
- Easy Integration: The SOT363 package facilitates the integration of the BCM847BS-7 into your existing designs without complicated layouts.
- Cost-Effectiveness: Providing high performance at a competitive price, the BCM847BS-7 is an economical choice for hobbyists and professionals alike.
Applications of BCM847BS-7
The versatility of the BCM847BS-7 allows it to be utilized in a broad spectrum of applications. Here are some common use cases:
- Low-Power Amplifiers: The BCM847BS-7 is ideal for building low-noise amplifiers where minimal current is required.
- Switching Devices: This transistor effectively acts as a switch for low to moderate current loads.
- Signal Processing: The BCM847BS-7 is suitable for RF signal applications and other amplification needs.
- Sensor Applications: Many sensor circuits utilize the BCM847BS-7 for signal conditioning and amplification.
Technical Specifications
For those interested in the technical details, here are the specifications of the BCM847BS-7:
- Transistor Type: NPN
- Collector-Emitter Voltage (VCE): 45V max
- Collector-Base Voltage (VCB): 45V max
- Emitter-Base Voltage (VE): 6V max
- Collector Current (IC): 0.1A max
- Power Dissipation (PD): 200mW
- DC Current Gain (hFE): 100-400
- Frequency Response (fT): 250MHz
- Package: SOT363
Installation and Usage Tips
To maximize the benefits of your BCM847BS-7, here are some practical tips for installation and usage:
- Check Pin Configuration: Ensure you understand the pin configuration of the SOT363 package before soldering.
- Use Appropriate Heat Management: Given the power dissipation limit, utilize suitable heat sinks if you’re nearing the max ratings.
- Capacitance in Circuits: Be mindful of capacitance and layout for stability when using the BCM847BS-7 in amplification applications.
- Testing: Always test your circuit before finalizing it in a project to ensure you receive the expected results.
Conclusion
The BCM847BS-7 is an outstanding NPN bipolar transistor that meets the demands of contemporary electronic applications. Its combination of reliability, versatility, and ease of integration makes it a top choice for both professionals and enthusiasts. Whether you’re designing a low-power amplifier, a switching device, or any signal processing application, the BCM847BS-7 provides the performance and reliability you require. Consider including the BCM847BS-7 in your next electronic project—it could significantly enhance your design’s effectiveness and efficiency. For a broader selection, feel free to explore our range of [NPN SMD Transistors](https://eselcom.com/product-category/semiconductors/transistors/bipolar-transistors/single-bipolar-transistors/npn-smd-transistors/).

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