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BAS40-04LT1G

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Schottky switching diode in SOT23 package, designed for surface mount applications. Features a voltage rating of 40V and a current capacity of 0.12A. Available on a reel for easy handling and assembly, with a power dissipation of 225mW. Ideal for efficient switching applications.

SKU: 298953442358 Category:
Weight:
2.3kg

0,23 

/

pcs

612 in stock

Estimated delivery time: 7-14 days
* Please note that delivery times may vary based on supplier availability and shipping location.

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Packing Information:
  • Packing Detail: RL1, ST, , 3000
Description

Welcome to the comprehensive overview of the BAS40-04LT1G, a remarkable Schottky diode designed to meet the demanding requirements of modern electronics. With its compact SOT23 package and surface-mount design, the BAS40-04LT1G is perfect for a wide range of applications and electronic devices where high efficiency and compactness are key.

Features of the BAS40-04LT1G

The BAS40-04LT1G diode boasts several outstanding features that make it a preferred choice among engineers and designers. Here are some of the key specifications:

  • Type: Schottky Switching Diode
  • Package: SOT23
  • Mounting Type: Surface-Mount Device (SMD)
  • Maximum Reverse Voltage (VR): 40V
  • Forward Current (IF): 0.12A
  • Power Dissipation: 225mW
  • Packaging: Reel and Tape

Understanding Schottky Diodes

Schottky diodes like the BAS40-04LT1G are known for their low forward voltage drop and rapid switching capabilities. These attributes make them ideal for high-frequency applications, such as rectification in power supplies, voltage clamping, and signal demodulation. The BAS40-04LT1G stands out due to its efficiency and reliability in various circuit designs.

Applications

The versatility of the BAS40-04LT1G makes it suitable for numerous applications across different sectors. Here are a few areas where this diode can be effectively utilized:

  • Switching Power Supplies
  • Signal Detection and Restoration
  • Power Management Circuits
  • Step Down Voltage Converters
  • RF Applications

Why Choose the BAS40-04LT1G?

Choosing the BAS40-04LT1G comes with a number of benefits that cater specifically to the needs of electronic design:

  • Compact Size: The SOT23 package ensures a space-saving component for dense circuit designs.
  • High Efficiency: The diode’s low forward voltage drop minimizes power loss, enhancing overall system efficiency.
  • Robust Performance: With a maximum reverse voltage of 40V, it can handle significant voltage spikes and surges.
  • Easy Integration: The SMD design allows for straightforward integration into automated assembly lines.

Technical Specifications

Here’s a detailed look at the technical specifications of the BAS40-04LT1G diode:

Specification Value
Part Number BAS40-04LT1G
Type Schottky Diode
Package SOT23
Mounting Type SMD
Maximum Reverse Voltage 40V
Forward Current 0.12A
Power Dissipation 225mW
Packaging Type Reel/Tape

Installation and Handling Tips

When working with the BAS40-04LT1G, it’s essential to follow best practices to ensure optimal performance and longevity:

  • ESD Caution: Handle the diode with care, using ESD-protective equipment to avoid damage.
  • Proper Soldering: Follow the recommended soldering techniques to maintain electrical integrity and performance.
  • Temperature Control: Ensure the device does not exceed its maximum operating temperature during installation.

Conclusion

The BAS40-04LT1G diode is an outstanding choice for designers seeking high-performance Schottky diodes in a compact format. With its robust specifications, versatile applications, and numerous advantages, the BAS40-04LT1G is sure to meet your electronic needs, providing reliable performance in a variety of circuit designs. Elevate your project by incorporating the BAS40-04LT1G today and experience the benefits of cutting-edge diode technology.

For more information on Schottky diodes, visit our diode category page: SMD Schottky Diodes.

Additional information
Weight 2,3-5 kg
Manufacturer

Type-of-diode

Case

Mounting

Max-off-state-voltage

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Semiconductor-structure

Capacitance

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Power-dissipation

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