2N7002PW,115

The 2N7002PW,115 is a high-performance N-channel Metal-Oxide-Semiconductor Field-Effect Transistor (N-MOSFET) designed for various electronic applications. Built with advanced trench technology, this transistor facilitates high-speed switching and reliable operation in diverse environments.

Product Overview

The 2N7002PW,115 is an outstanding choice for engineers and developers looking for efficient and reliable transistor solutions. It features a voltage rating of 60V and a continuous drain current (Id) of 0.24A, making it suitable for a wide range of applications, including low-power switching, signal amplification, and power management systems.

Key Specifications

• Type: N-MOSFET
• Technology: Trench
• Voltage Rating: 60V
• Continuous Current (Id): 0.24A
• Pulse Current (Idm): 1.2A
• Total Dissipation: 0.26W

Features

The 2N7002PW,115 offers a range of features that make it an ideal component for various electronic circuits. Here are some key features:

• Unipolar Operation: The unipolar design of the N-MOSFET allows for efficient electronic switching without the complexities of bipolar transistors.
• High-Speed Switching: Thanks to its trench technology, the 2N7002PW,115 can execute fast switching transitions, essential for modern electronic circuits.
• Thermal Stability: This MOSFET is designed to operate efficiently even at elevated temperatures, which enhances reliability in various applications.
• Compact Package: The 2N7002PW,115 is available in a compact package, making it suitable for use in space-constrained environments.

Applications

The 2N7002PW,115 is highly versatile and can be utilized in several application domains, including:

• Low Power Switching: Use it in on/off switching applications for low-power circuits.
• Signal Amplification: Implement it as a signal amplifier in communication devices.
• Power Management: Ideal for power management systems in consumer electronics and automotive solutions.
• LED Lighting: Suitable for driving LED circuits, ensuring optimal performance and efficiency.

Advantages of Using 2N7002PW,115

When you choose the 2N7002PW,115, you benefit from several advantages that enhance circuit designs:

• Efficiency: Its low on-state resistance ensures minimal power losses during operation.
• Reliability: With robust thermal performance, it withstands varying environmental conditions without failure.
• Cost-Effective: The 2N7002PW,115 offers a high-performance solution at a competitive price point, making it accessible for various budget considerations.

Installation and Handling

To maximize the performance of the 2N7002PW,115, proper installation and handling are crucial:

• Static Precautions: Always handle the MOSFET with appropriate anti-static measures to prevent damage due to electrostatic discharge.
• Proper Soldering: Ensure that soldering techniques adhere to manufacturer guidelines to avoid thermal and mechanical stress on the device.
• Assembly Considerations: Pay attention to the layout of your printed circuit board to minimize parasitic inductances and resistances that could impact performance.

Technical Support and Resources

If you are considering integrating the 2N7002PW,115 into your projects, various resources are available to assist:

• Data Sheets: Access comprehensive data sheets for detailed specifications and characteristics.
• Application Notes: Review application notes for effective implementation tips and strategies.
• Technical Support: Engage with technical support from manufacturers for assistance and guidance on your projects.

Conclusion

The 2N7002PW,115 is a high-quality N-MOSFET that combines performance, efficiency, and reliability, making it an excellent choice for modern electronic designs. Whether you are developing consumer electronics, automotive systems, or industrial applications, this MOSFET meets your demands with precision. Invest in your project’s success by incorporating the 2N7002PW,115 into your next design.

For further information and to explore more products, visit our N-channel Transistors category page.