2N7002NXBKR

The 2N7002NXBKR is an advanced N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) specifically designed to meet the rising demands of modern electronic applications. As a unipolar, trench-type transistor, the 2N7002NXBKR showcases outstanding performance in various circuits, delivering remarkable efficiency and reliability.

Key Features of the 2N7002NXBKR

• Voltage Rating: The 2N7002NXBKR can handle a drain-source voltage of up to 60V, making it suitable for a wide range of applications.
• Current Capability: With a continuous drain current (Id) rating of 0.17A, and a maximum pulsed drain current (Idm) of 0.9A, this MOSFET provides strong performance under various electrical loads.
• Power Dissipation: The 2N7002NXBKR has a power dissipation capability of 0.31W, ensuring efficient thermal management in high-frequency applications.
• Trench Technology: Utilizing trench technology, this device offers lower on-resistance and improved efficiency compared to traditional planar MOSFETs.

Applications of the 2N7002NXBKR

The 2N7002NXBKR is perfect for a variety of applications across multiple industries. Here are some of the primary uses:

• Switching Circuits: Its excellent switching performance makes it ideal for power management in computer power supplies and other electronic devices.
• Electrical Loads: This MOSFET adeptly handles various electrical loads in monitoring and control systems, improving the efficiency of power distribution.
• Signal Amplification: The 2N7002NXBKR is also effective in low-power signal amplification applications, ensuring clear and efficient signal transmission.
• Analog and Digital Switching: This transistor is crucial for analog and digital applications where switching speed and reliability are vital.

Technical Specifications

Familiarizing yourself with the technical specifications of the 2N7002NXBKR is essential when considering it for your next project:

• Type: N-channel MOSFET
• Package: Available in a widely used surface mount (SMD) package, facilitating easy integration into circuits.
• Gate Threshold Voltage (Vgs(th)): Typically between 1-3V, making it suitable for low-voltage applications.
• Rds(on): Offers very low on-resistance, which reduces power losses in numerous applications.

Advantages of Choosing 2N7002NXBKR

Choosing the 2N7002NXBKR offers numerous advantages, including:

• High Efficiency: Its trench structure provides higher efficiency and improved thermal performance.
• Compact Size: The small package size allows for easy integration into compact designs, catering to modern miniaturization needs.
• Reliable Operation: With robust construction and high-quality manufacturing, this MOSFET ensures durability and reliability across various operating conditions.
• Wide Availability: The 2N7002NXBKR is readily available in the market, making it a dependable choice for engineers worldwide.

Why the 2N7002NXBKR Stands Out

In a saturated market of various MOSFET options, the 2N7002NXBKR stands out by offering a blend of performance, versatility, and user-friendliness. Its unique trench technology significantly reduces on-resistance, directly enhancing thermal efficiency in circuit designs. Additionally, this device is engineered to meet the demanding requirements of both analog and digital applications, making it a versatile choice for engineers globally.

Conclusion

In summary, the 2N7002NXBKR N-MOSFET is a high-performing, efficient transistor ideal for a wide array of applications, particularly in switching, signal amplification, and power management. With features like a 60V voltage rating, 0.17A continuous current capacity, and a power dissipation rating of 0.31W, it meets the needs of many modern electronic designs.

Whether you are developing consumer electronics, automotive systems, or industrial applications, the 2N7002NXBKR is ready to deliver superior performance, reliability, and efficiency.

Optimize your next project by integrating the 2N7002NXBKR and experience the difference in quality and performance that this exceptional MOSFET provides.

For more information on similar products, check out our collection of N-channel transistors.