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2N7002KW-AU_R1_000A1

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This N-MOSFET transistor operates at 60V and can handle a current of up to 250mA, with a maximum pulse current of 1A. It features a power dissipation of 350mW and comes in a SOT323 package, suitable for various electronic applications.

SKU: 298884142477 Category:
Weight:
9kg

0,29 

/

pcs

1849 in stock

Estimated delivery time: 7-14 days
* Please note that delivery times may vary based on supplier availability and shipping location.

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Packing Information:
  • Packing Detail: RL1, ST, , 3000
Description

2N7002KW-AU_R1_000A1 is a highly versatile N-channel MOSFET that stands out with its remarkable specifications and features suitable for a variety of electronic applications. This unipolar transistor is designed to handle significant voltage levels and current loads, making it an essential component for both amateur and professional electronics projects. In this description, we will explore its characteristics, applications, and benefits in detail.

Key Features of 2N7002KW-AU_R1_000A1

The 2N7002KW-AU_R1_000A1 transistor is engineered to deliver outstanding performance in multiple environments. Here are the key features:

  • Voltage Rating: Operating voltage up to 60V.
  • Current Rating: Continuous drain current of 250mA, with a maximum of 1A for pulsed applications.
  • Power Dissipation: Capable of dissipating up to 350mW, ensuring efficient thermal management.
  • Package Type: SOT323, which allows for compact designs and easy integration into various circuit boards.
  • Material: Constructed from high-quality semiconductor materials for long-lasting durability and reliability.

Technical Specifications

Electrical Characteristics

The 2N7002KW-AU_R1_000A1 transistor boasts several electrical characteristics that make it ideal for specific applications. Below are some key specifications:

  • Gate Threshold Voltage (Vgs): 2V – 4V.
  • On-State Drain Current (Ids): 250mA (typical usage).
  • Maximum Pulsed Drain Current (Idm): 1A.
  • Output Conductance: Excellent output conductance to enhance efficiency in circuits.

Thermal Characteristics

Thermal management is crucial for the effective functioning of electronic components, and the 2N7002KW-AU_R1_000A1 offers:

  • Thermal Resistance (junction-to-ambient): Values optimized for better heat dissipation.
  • Operating Temperature Range: Wide operational range to prevent overheating.

Applications of 2N7002KW-AU_R1_000A1

The versatility of the 2N7002KW-AU_R1_000A1 makes it suitable for a broad spectrum of applications across various sectors. Here are some common applications:

  • Switching Power Supplies: Used efficiently as a switch for controlling power flow.
  • Signal Amplification: Enhances signal quality in various electronic circuits.
  • Relay Replacement: Can be used in place of mechanical relays for fast switching.
  • Motor Control: Essential in controlling small motors for robotics and automation.
  • LED Drivers: Ideal for driving low-current LEDs in various lighting applications.

Benefits of Using 2N7002KW-AU_R1_000A1

Choosing the 2N7002KW-AU_R1_000A1 for your electronic projects offers significant advantages:

  • Reliability: Built for stability and longevity, minimizing the risk of failure in critical applications.
  • Compact Size: The SOT323 package allows for space-saving designs, essential in modern electronics.
  • High Efficiency: Low on-resistance during conduction leads to reduced power losses.
  • Ease of Use: Simple integration into existing circuits, making it suitable for novices and experts alike.

Conclusion

In summary, the 2N7002KW-AU_R1_000A1 N-channel MOSFET is a powerful, reliable, and compact solution for high-voltage and low-current applications. Its competitive specifications and broad application range make it a staple in the electronics industry. Whether you are constructing a basic circuit or developing complex electronic devices, this MOSFET can help you achieve optimal performance. Investing in the 2N7002KW-AU_R1_000A1 ensures you have a dependable component that meets industry standards and project requirements.

For more options and information, visit our SMD N-channel Transistor category.

Additional information
Weight 9,0-6 kg
Manufacturer

Mounting

Application

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On-state-resistance

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Gate-charge

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