2N7002H-7

The 2N7002H-7 is a robust N-channel MOSFET essential for a wide range of electronic circuits. This unipolar transistor is engineered to handle voltages up to 60 volts, delivering a current of 0.21 amps and supporting power dissipation up to 0.37 watts. Its compact SOT23 package makes it an ideal choice for modern electronics, allowing for efficient circuit designs while minimizing space requirements.

Key Features of the 2N7002H-7

• Type: N-channel MOSFET
• Voltage Rating: 60V
• Continuous Drain Current: 0.21A
• Maximum Power Dissipation: 0.37W
• Package Type: SOT23
• Unipolar Operation

Applications of the 2N7002H-7

The 2N7002H-7 is perfect for various applications that demand reliable switching and amplification. Some common applications include:

• Low-side switching in power management circuits
• Signal switching in analog applications
• Driving loads like LEDs, motors, and relays
• Level shifting in digital systems
• Amplifying weak signals in RF applications

Why Choose the 2N7002H-7?

When selecting a transistor for your projects, consider voltage rating, current capacity, and package size. The 2N7002H-7 offers an excellent combination of high voltage handling and manageable current levels, making it standout for various electronic designs.

1. High Voltage Rating

With a maximum voltage rating of 60V, the 2N7002H-7 is suitable for applications that require exceptional voltage tolerance. This feature is critical for gate driving and other high-voltage applications where reliability is essential.

2. Efficient Power Dissipation

Power dissipation is crucial when choosing a transistor. The 2N7002H-7 can manage up to 0.37W, ensuring efficient operation across diverse environments without the risk of thermal failure.

3. Small Package Size

Encased in the SOT23 package, the 2N7002H-7 is designed for optimal space efficiency. This attribute makes it suitable for modern compact electronics, such as mobile devices, IoT applications, and wearables.

Understanding MOSFET Technology

The 2N7002H-7 is a member of the MOSFET family, which stands for Metal-Oxide-Semiconductor Field-Effect Transistor. Unlike bipolar junction transistors (BJTs), MOSFETs are voltage-driven devices. Here’s why they are widely used:

• Higher Input Impedance: The 2N7002H-7 features a high input impedance, allowing efficient operation with less current.
• Faster Switching: Compared to BJTs, the 2N7002H-7 provides faster switching speeds, making it ideal for digital circuit applications.
• Lower On-State Resistance: It has a low on-state resistance, which reduces power losses during operation.

Specifications Summary

Understanding the specifications of the 2N7002H-7 can help you make informed decisions for your electronics projects:

Conclusion

In summary, the 2N7002H-7 N-channel MOSFET is a versatile and efficient electronic component utilized across various applications. Its high voltage rating, compact size, and efficient performance make it a preferred choice among engineers and hobbyists. Choose the 2N7002H-7 for your next project, and experience the power of modern electronics in a compact package. For more information regarding this product, visit our [N-channel transistors category](https://eselcom.com/product-category/semiconductors/transistors/unipolar-transistors/n-channel-transistors/smd-n-channel-transistors/).