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This N-MOSFET transistor features a 60V rating, 220mA continuous drain current, and a maximum pulsed drain current of 1.2A. It has a power dissipation of 0.42W and comes in a SOT23 package, making it suitable for various electronic applications.
0,23 €
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1942 in stock
Estimated delivery time: 7-14 days
* Please note that delivery times may vary based on supplier availability and shipping location.
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1 | $0.19 |
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500 | $0.05 |
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1942 in stock
- Packing Detail: RL1, ST, , 3500
Explore the Versatility of the 2N7002ET7G N-MOSFET Transistor
The 2N7002ET7G is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) that is designed for a wide range of electronic applications. With its remarkable specifications and robust design, it’s an ideal choice for various projects that demand efficiency, reliability, and durability. In this detailed overview, we will break down its features, applications, and key benefits to help you understand why the 2N7002ET7G should be your go-to semiconductor component.
Feature Highlights of the 2N7002ET7G
When selecting a transistor for your project, it’s crucial to consider the specifications that meet your needs. The 2N7002ET7G offers several attributes that cater to both hobbyists and professionals alike:
- Type: N-MOSFET
- Voltage Rating: 60V
- Continuous Drain Current (Id): 220mA
- Pulsed Drain Current (Idm): 1.2A
- Power Dissipation: 0.42W
- Package Type: SOT-23
Understanding the Key Specifications
Let’s dive deeper into what these specifications mean for the 2N7002ET7G and how they apply to practical use:
1. N-MOSFET Technology
The 2N7002ET7G operates as a unipolar N-channel transistor. This design allows for fast switching and greater efficiency compared to other types of transistors, making it a preferred choice for low-voltage applications.
2. Voltage Rating of 60V
With a maximum voltage rating of 60 volts, the 2N7002ET7G can easily handle a variety of operational voltages without risking damage. This makes it suitable for both low and moderate voltage applications in consumer electronics, automotive electronics, and industrial machinery.
3. Continuous Drain Current of 220mA
The continuous drain current rating of 220mA allows for efficient control of current in various circuits. Whether you’re working on logic-level interfacing, switching applications, or small motor control, the 2N7002ET7G can deliver consistent performance.
4. Pulsed Drain Current Capacity
Supporting a pulsed drain current of 1.2A, the 2N7002ET7G is built for handling inrush currents during device startup. This ensures that your circuits can stride past temporary surges of current without failure.
5. Power Dissipation Capability
Rated for a power dissipation of 0.42W, the 2N7002ET7G is efficient enough to manage heat buildup during operation, which is crucial for the longevity of your electronic designs. It’s designed to dissipate heat effectively, preventing overheating and enhancing overall reliability.
6. Compact SOT-23 Package
The 2N7002ET7G is housed in a SOT-23 package, which minimizes the footprint on your PCB. This compact design allows for efficient use of space, making it an excellent option for modern, space-constrained applications.
Application Areas for the 2N7002ET7G
The versatility of the 2N7002ET7G N-MOSFET translates to its compatibility with various applications:
- Digital circuit switching
- Relay drivers
- LED drivers
- Low power motor control
- Signal amplification
- Input/output control in microcontrollers
- Battery management systems
Why Choose the 2N7002ET7G?
The choice to use the 2N7002ET7G in your projects is reinforced by several compelling reasons:
- Reliability: With its robust design and tested specifications, this transistor ensures that your applications can run efficiently and smoothly.
- Efficiency: The N-channel configuration allows for high-speed and low resistance, contributing to energy-savvy designs.
- Affordability: Given its performance and specifications, the 2N7002ET7G is priced competitively, making it an affordable choice for both prototyping and mass production.
- Widespread Availability: The 2N7002ET7G is widely available, making sourcing easy for large-scale projects or one-off prototypes.
Conclusion
In conclusion, the 2N7002ET7G N-MOSFET transistor is a highly efficient, versatile, and reliable component that fits perfectly in a multitude of applications. Its robust specifications ensure that it can handle various operating conditions, from simple switching tasks to more complex circuit demands. Whether you are a hobbyist working on your next project or a professional engineer seeking dependable components for your design, the 2N7002ET7G is a strong ally in your electronic endeavors.
Invest in the 2N7002ET7G today to elevate the performance of your electronics and unlock new possibilities in your projects! For more information on similar products, check out our SMD N-channel Transistors category.
Weight | 1,6-5 kg |
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