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2N7002BKW,115

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This N-MOSFET transistor features a trench design and operates at 60V with a continuous current rating of 0.215A and a maximum pulsed current of 1.2A. It is unipolar and includes ESD protection, making it suitable for a variety of electronic applications.

SKU: 298883875555 Category:
Weight:
1.4kg

$0.39

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pcs

11419 in stock

Estimated delivery time: 7-14 days
* Please note that delivery times may vary based on supplier availability and shipping location.

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  • Packing Detail: RL1, ST, , 3000
Description

Transistors are essential components in modern electronic devices, and among them, the 2N7002BKW,115 N-MOSFET is distinguished by its robust specifications and versatile applications. For those seeking a reliable and efficient N-channel MOSFET, the 2N7002BKW,115 is an excellent choice. This article will explore the features, specifications, applications, and advantages of integrating the 2N7002BKW,115 into your electronic designs.

Overview of N-MOSFET Technology

N-MOSFET (N-channel Metal-Oxide-Semiconductor Field-Effect Transistor) technology marks a significant advancement in semiconductor electronics. It facilitates effective current flow control with minimal resistance. The 2N7002BKW,115 is a trench-type N-MOSFET, designed with a specialized structure that enhances its performance, particularly in low-voltage applications.

Key Features

  • Voltage Rating: The 2N7002BKW,115 has a maximum voltage rating of 60V, making it suitable for a wide range of applications where moderate voltage levels are essential.
  • Current Rating: This MOSFET can handle a continuous drain current of up to 0.215A, with a pulsed current rating (Idm) reaching up to 1.2A, ensuring reliability in demanding applications.
  • ESD Protection: The 2N7002BKW,115 is equipped with built-in electrostatic discharge (ESD) protection, enhancing durability and reliability in various operational environments.
  • Unipolar Device: As a unipolar device, it operates efficiently with just a single type of charge carrier (electrons), resulting in faster switching times and improved energy efficiency.

Specifications

The detailed specifications of the 2N7002BKW,115 highlight its capabilities:

  • Type: N-MOSFET
  • Technology: Trench architecture
  • Maximum Voltage (Vds): 60V
  • Continuous Drain Current (Id): 0.215A
  • Pulsed Drain Current (Idm): 1.2A
  • Gate Threshold Voltage (Vgs(th)): Defines the voltage necessary to turn the MOSFET on.
  • Power Dissipation: The thermal performance that allows for operation without overheating under specified load conditions.

Applications

The 2N7002BKW,115 can be utilized in various electronic applications, providing flexibility and performance:

  • Switching Applications: Ideal for controlling circuits, the 2N7002BKW,115 is frequently used in automated control systems and microprocessors.
  • Signal Amplification: This N-MOSFET serves effectively as a signal amplifier in various circuits, enhancing voltage signals while maintaining quality.
  • LED Drivers: It can efficiently drive LED loads in lighting systems, ensuring brightness while minimizing power consumption.
  • Power Management Systems: The compact design and efficient specifications make it an ideal choice for power management applications in mobile devices and portable electronics.

Advantages of Using the 2N7002BKW,115

Choosing the 2N7002BKW,115 for your electronic designs offers numerous advantages:

  • Compact Size: Its small form factor saves space on printed circuit boards (PCBs), enabling more intricate designs and reducing overall device size.
  • Low On-Resistance: This results in enhanced efficiency and reduced heat generation during operation, contributing to a longer lifespan for your electronic devices.
  • Reliable Performance: With its durable construction and ESD protection, users can expect consistent operation, reducing downtime and maintenance costs.
  • Wide Availability: The 2N7002BKW,115 is readily available from various suppliers, making sourcing easy for integration into your designs.

Conclusion

In summary, the 2N7002BKW,115 N-MOSFET stands out as a highly efficient and versatile component suitable for a range of applications. With features such as a 60V voltage rating, 0.215A continuous current handling, and ESD protection, it is a reliable choice for engineers and hobbyists alike.

Whether you’re working on switching applications, LED drivers, or power management systems, the 2N7002BKW,115 can elevate the performance and efficiency of your projects. Its compact size, low on-resistance, and dependable characteristics establish it as a key component in modern electronics. Consider integrating the 2N7002BKW,115 into your next design for optimal results!

For more information on a wider selection of components, visit our SMD N-Channel Transistors category page.

Additional information
Weight 1.4-5 kg
Manufacturer

Type-of-transistor

Technology

Polarisation

Drain-source-voltage

Drain-current

Pulsed-drain-current

Power-dissipation

Case

Gate-source-voltage

On-state-resistance

Mounting

Gate-charge

Kind-of-package

Kind-of-channel

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