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2N7002,215

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This N-MOSFET transistor features a trench design with a voltage rating of 60V and a continuous current of 0.19A. It can handle a pulsed current of up to 1.2A and has a power dissipation capacity of 830mW, making it suitable for various electronic applications.

SKU: 298883868241 Category:
Weight:
1.5kg

$0.32

/

pcs

30221 in stock

Estimated delivery time: 7-14 days
* Please note that delivery times may vary based on supplier availability and shipping location.

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Packing Information:
  • Packing Detail: RL1, ST, , 3000
Description

2N7002,215 is a versatile and efficient N-channel MOSFET designed to deliver significant advantages for a wide range of electronic applications. With exceptional performance in unipolar transistor technology, the 2N7002,215 is ideal for designers seeking high reliability and low on-resistance in their circuits. In this product description, we will cover the features, specifications, and applications of the 2N7002,215 to help you understand its capabilities and why it may be the right choice for your next project.

What is the 2N7002,215?

The 2N7002,215 is a highly reliable N-channel MOSFET specifically designed for trench technology applications. With its unipolar configuration, this transistor excels in controlling and switching electronic signals, making it an excellent component for both low and high power designs.

Key Features of the 2N7002,215

  • Voltage Rating: The 2N7002,215 can handle a maximum voltage of 60V, providing a robust solution for various applications in voltage-sensitive environments.
  • Drain Current: With a continuous drain current rating of 0.19A, and a maximum pulsed drain current (Idm) of 1.2A, this MOSFET can efficiently manage significant loads.
  • Power Dissipation: The 2N7002,215 features a maximum power dissipation of 830mW, allowing it to operate smoothly under demanding conditions without overheating.
  • Fast Switching: Featuring fast switching capabilities, the 2N7002,215 quickly responds to control signals, making it suitable for high-speed applications.
  • Small Package Size: The compact design of the 2N7002,215 occupies minimal PCB space, making it a preferred choice for space-constrained designs.

Specifications of the 2N7002,215

Understanding the technical specifications of the 2N7002,215 is crucial for selecting the right component for your application. Here’s a quick overview of its specifications:

Electrical Characteristics

  • Type: N-channel MOSFET
  • Maximum Vds (Drain-Source Voltage): 60 Volts
  • Max Id (Continuous Drain Current): 0.19 Amps
  • Max Idm (Pulsed Drain Current): 1.2 Amps
  • Power Dissipation: 830 mW

Thermal Characteristics

  • Junction to Ambient Thermal Resistance: 150°C/W
  • Max Operating Temperature: +150°C

Package Information

  • Package Type: TO-236
  • Pin Count: 3
  • Package Height: 1.1 mm

Applications of the 2N7002,215

The 2N7002,215 is utilized across a wide range of applications, making it a preferred choice among engineers and designers:

  • Switching Circuits: The fast switching capabilities enable efficient operation in switching circuits.
  • Relay Replacement: Its low on-resistance makes the 2N7002,215 a suitable option to replace mechanical relays in various designs.
  • Motor Control: This MOSFET is effective in simple motor control applications due to its ability to manage reasonable current levels.
  • LED Drivers: It can efficiently drive LEDs, contributing to a longer lifespan and reduced power consumption.
  • Power Management Circuits: The 2N7002,215 excels in power management applications, where efficiency is critical.

Why Choose the 2N7002,215?

The selection of the 2N7002,215 for your projects is guided by its extensive feature set and reliable operation. Here are some compelling reasons to consider:

  • High Efficiency: Its low on-resistance leads to minimal energy loss during operation, making it an energy-efficient choice.
  • Cost-Effective: With competitive pricing, the 2N7002,215 provides an economical solution without sacrificing performance.
  • Robust Performance: Rated for high voltage while maintaining low power dissipation ensures long-term reliability and performance.
  • Versatility: Suitable for a wide range of applications, from consumer electronics to industrial equipment.

Conclusion

In summary, the 2N7002,215 is an outstanding N-channel MOSFET known for exceptional performance in many electronic applications. With key features such as a 60V maximum voltage, 0.19A continuous drain current, and a compact design, this device stands out as a reliable choice for engineers and designers. For your next project, consider integrating the 2N7002,215 into your designs to experience its capabilities firsthand. Discover more about N-channel transistors and related products by checking out our category page here.

Additional information
Weight 1.5-5 kg
Manufacturer

Type-of-transistor

Technology

Polarisation

Drain-source-voltage

Drain-current

Pulsed-drain-current

Power-dissipation

Case

Gate-source-voltage

On-state-resistance

Mounting

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Kind-of-channel

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