2N7000-D26Z

Introducing the 2N7000-D26Z, a highly efficient N-channel MOSFET transistor that is perfect for a wide range of electronic applications. Designed for unipolar conductivity, this versatile transistor can operate effectively at a voltage of up to 60V and can handle a continuous drain current of 0.2A. Its maximum pulsed current (Idm) is rated at 0.5A, making it suitable for various switching applications.

Key Features of the 2N7000-D26Z

The 2N7000-D26Z comes packed with features that ensure its reliability and performance in diverse applications:

• Type: N-channel MOSFET
• Voltage Rating: 60V
• Continuous Drain Current: 0.2A
• Pulsed Drain Current: 0.5A
• Power Dissipation: 0.4W
• Package: TO-92 (small form factor)
• Unipolar Operation: Efficient and simple to use

Understanding N-MOSFET Technology

N-channel MOSFETs, like the 2N7000-D26Z, are critical components in modern electronics. They are widely used because they offer several advantages over bipolar junction transistors (BJTs), such as:

• Higher Efficiency: Lower on-resistance provides better thermal management.
• Faster Switching: N-MOSFETs switch on and off more quickly, making them ideal for high-frequency applications.
• Simpler Drive Requirements: They can be driven with lower gate voltages compared to BJTs, making them easier to control.

Applications of the 2N7000-D26Z

The 2N7000-D26Z is suitable for a variety of applications, including:

• Switching Circuits: Ideal for use in power switches, enabling control of DC loads.
• Signal Amplification: Can be used in audio and RF amplification circuits.
• Line Drivers: Enhances signal transmission in data lines.
• Load Switching: Effectively switches loads on and off in electronic projects.

Technical Specifications

For those interested in the technical aspects, here are the detailed specifications of the 2N7000-D26Z:

• V_DS (Drain-Source Voltage): Up to 60V
• V_GS (Gate-Source Voltage): Maximum ±20V
• I_D (Drain Current): Up to 0.2A
• Idm (Pulsed Drain Current): 0.5A
• P_D (Power Dissipation): 0.4W at 25°C junction temperature
• Input Capacitance: 30pF (typical at V_DS=10V)
• Output Capacitance: 80pF (typical at V_DS=10V)
• Package Type: TO-92

Why Choose the 2N7000-D26Z?

The 2N7000-D26Z is an outstanding choice for hobbyists and professionals alike. Its small footprint in the TO-92 package makes it easy to integrate into various designs without consuming much space on the PCB. Beyond its compact size, its specifications help it stand out amongst its peers:

• Reliable Performance: Known for long-lasting and consistent performance.
• Versatile Usage: Suitable for educational projects or sophisticated systems, this MOSFET adapts to multiple applications.
• Cost-Effective: Offering high specifications at a competitive price makes it a budget-friendly option for both prototypes and production units.

Conclusion

In conclusion, the 2N7000-D26Z is a remarkable N-channel MOSFET that combines efficiency, versatility, and performance into a compact TO-92 package. Whether you are designing a simple switch, an audio amplifier, or a complex electronic system, this transistor will provide the reliability and functionality you need. Its ability to handle up to 60V and 0.2A makes it suitable for various applications, while its easy-to-use specifications ensure a smooth integration into your projects.

Don’t miss the chance to enhance your electronic designs with the efficient and reliable 2N7000-D26Z. For more options, explore our full collection of N-channel MOSFETs [here](https://eselcom.com/product-category/semiconductors/transistors/unipolar-transistors/n-channel-transistors/tht-n-channel-transistors/). Whether for industrial applications or personal projects, this N-MOSFET is ready to meet your requirements and exceed your expectations.