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2N7002A-7
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The N-MOSFET transistor features a unipolar design, with a voltage rating of 60V and a current rating of 0.14A. It supports a maximum pulsed drain current of 0.8A and has a power dissipation of 0.37W, packaged in a SOT23 form factor.
Weight:
1.4kg
0,33 €
/
pcs
3620 in stock
Estimated delivery time: 7-14 days
* Please note that delivery times may vary based on supplier availability and shipping location.
| Quantity From | Price Per Item |
|---|---|
| 1 | $0.28 |
| 5 | $0.21 |
| 10 | $0.18 |
| 50 | $0.12 |
| 100 | $0.10 |
Order in multiples of:
1
3620 in stock
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Packing Information:
- Packing Detail: RL1, ST, , 3000
Description
Introducing the 2N7002A-7: a high-performance N-MOSFET designed to meet your circuit needs. This unipolar transistor is celebrated for its reliability and efficiency, making it an ideal choice for a variety of applications. With a breakdown voltage rated at 60V and a continuous drain current of 0.14A, the 2N7002A-7 is exceptionally versatile.
Product Features
The 2N7002A-7 is engineered to deliver outstanding performance in numerous electronic circuits. Below are some of its noteworthy features:
- Type: N-MOSFET
- Technology: Unipolar
- Maximum Drain-Source Voltage (Vds): 60V
- Continuous Drain Current (Id): 0.14A
- Pulsed Drain Current (Idm): 0.8A
- Power Dissipation (Pd): 0.37W
- Package Type: SOT23
Applications
The 2N7002A-7 can be utilized in various applications due to its excellent electrical characteristics. Common applications include:
- Switching regulators
- Power management systems
- Signal amplification
- Relay drivers
- LED drivers
Technical Specifications
Understanding the technical specifications of the 2N7002A-7 is crucial for effectively implementing this component in your projects. Here are the key specifications:
- Gate Threshold Voltage (Vgs(th)): Typically between 2V and 4V
- Gate-Source Voltage (Vgs): Maximum ±20V
- Drain-Source Cut-Off Current (Idss): Max 1μA at Vds = 60V
- Input Capacitance (Ciss): 90 pF at Vgs = 0V
- Output Capacitance (Coss): 15 pF at Vds = 25V
- Reverse Capacitance (Crss): 6 pF at Vds = 25V
Benefits of Using the 2N7002A-7
Choosing the 2N7002A-7 for your electronic applications comes with several advantages:
- Compact Size: The SOT23 package allows for a smaller footprint on your PCB, making it suitable for space-constrained designs.
- High Speed: The fast switching capabilities of the 2N7002A-7 improve overall circuit efficiency.
- Low On-Resistance: The low on-resistance of this MOSFET minimizes power loss and heat generation.
- Cost-Effective: The affordability of the 2N7002A-7 does not compromise its quality, making it an economical choice for many engineers.
- Versatile Performance: Its robust specifications allow it to perform well in various applications, from small-signal circuits to power applications.
Why Choose the 2N7002A-7?
With a growing demand for reliable, efficient transistors in the industry, the 2N7002A-7 stands out due to its exceptional qualities. Whether you are designing a new circuit or upgrading existing ones, this MOSFET provides a combination of performance, size, and affordability.
Conclusion
In conclusion, the 2N7002A-7 is a reliable N-MOSFET ideal for a range of electronic applications. With its high breakdown voltage, low on-resistance, and compact SOT23 package, it is well-suited for both hobbyists and professionals alike. Invest in the 2N7002A-7 for your next project and experience its reliability and versatility in action.
Whether you are working on a DIY electronics project or a professional circuit design, the 2N7002A-7 offers the efficiency and quality you need to achieve your goals. Explore the capabilities of this outstanding N-MOSFET today! For more related products, visit our N-Channel Transistors category.
Additional information
| Weight | 1,4-5 kg |
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