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BGH75N65ZF1

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This product is a high-performance transistor featuring IGBT technology and a SiC SBD design. It operates at 650V with a current rating of 75A and a power dissipation capability of 405W. The device is housed in a TO247-4 package, suitable for various power applications.

SKU: 298960292952 Category:
Weight:
6.687g

17,25 

/

pcs

30 in stock

Estimated delivery time: 7-14 days
* Please note that delivery times may vary based on supplier availability and shipping location.

Quantity FromPrice Per Item
1$14.38
2$10.42
4$9.84
150$9.54
600$9.47

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1

30 in stock

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Packing Information:
  • Packing Detail: TB1, ST, , 30
Description

Introducing the BGH75N65ZF1: Your Ultimate Power Transistor Solution

The BGH75N65ZF1 is a cutting-edge power transistor designed for high-efficiency applications. This Insulated Gate Bipolar Transistor (IGBT) operates effectively at a voltage of 650V and a current rating of 75A, making it ideal for a variety of demanding applications. In this comprehensive guide, we will explore the features, benefits, and applications of the BGH75N65ZF1, helping you make an informed decision for your power management needs.

Key Features of the BGH75N65ZF1

  • Type: Insulated Gate Bipolar Transistor (IGBT)
  • Voltage Rating: 650V
  • Current Rating: 75A
  • Power Dissipation: 405W
  • Package Type: TO247-4

Advanced Components for Optimal Performance

The BGH75N65ZF1 effectively combines the benefits of both MOSFETs and bipolar transistors, allowing for enhanced performance in power applications. Its design incorporates a silicon carbide (SiC) Schottky barrier diode (SBD) that offers high efficiency and improved thermal performance. This innovation ensures lower switching losses and better thermal conductivity, enabling the device to operate in high-temperature environments without compromising performance.

Advantages of Using the BGH75N65ZF1

Choosing the BGH75N65ZF1 for your applications comes with several significant advantages:

  • High Efficiency: The integrated SiC SBD minimizes losses, leading to improved energy efficiency compared to traditional silicon-based transistors.
  • Thermal Management: With a power dissipation capacity of up to 405W, the BGH75N65ZF1 effectively manages heat dissipation for reliable operation.
  • Robust Design: The TO247-4 packaging allows for easy integration into existing designs, while providing robust protection from environmental influences.
  • Versatile Applications: Suitable for a wide range of applications, from industrial machinery to renewable energy systems.

Applications of the BGH75N65ZF1

The versatility of the BGH75N65ZF1 makes it an excellent choice for numerous applications, including:

  • Inverter Systems: Ideal for converting direct current (DC) to alternating current (AC), especially in renewable energy setups like solar inverters.
  • Motor Drives: Perfect for controlling electric motors, enhancing efficiency in industrial automation and robotics.
  • Power Supplies: Widely used in switch-mode power supplies (SMPS) to improve performance in power distribution and electronic devices.
  • Electric Vehicles: Supports power management systems in electric and hybrid vehicles, contributing to improved energy efficiency and range.
  • UPS Systems: Vital for uninterruptible power supplies, ensuring reliability in emergency power management.

Installation and Compatibility

The BGH75N65ZF1 is designed for seamless integration into various electronic systems. The TO247-4 package format is well-suited for both through-hole and surface mount technologies, offering flexibility during installation. To ensure optimal performance:

  • Review the datasheet for specific pin configurations and electrical characteristics.
  • Ensure proper thermal management strategies are in place, such as heatsinks or thermal pads, to effectively dissipate heat during operation.
  • Check compatibility with your existing circuit design to avoid any integration challenges.

Comparison with Other Transistors

When compared to other transistors in similar categories, the BGH75N65ZF1 stands out due to its unique combination of voltage, current rating, and efficiency. Alternatives may not provide the same level of thermal performance or energy savings, making the BGH75N65ZF1 a superior choice for power electronic applications.

Conclusion

In conclusion, the BGH75N65ZF1 is a revolutionary power transistor that meets the demands of modern electronic applications with unparalleled efficiency and reliability. Its advanced construction, combining IGBT capabilities with a SiC SBD, makes it an excellent option for industries ranging from renewable energy to automotive. Investing in the BGH75N65ZF1 guarantees high-performance outcomes and sustainable operations in your electronic systems. Choose the BGH75N65ZF1 today to unlock the potential of your power management applications.

For more information on this product and to explore additional options, visit our IGBT Transistors category.

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Additional information
Weight 0,006687 kg
Manufacturer

Mounting

Collector-current

Pulsed-collector-current

Turn-on-time

Turn-off-time

Type-of-transistor

Power-dissipation

Kind-of-package

Features-of-semiconductor-devices

Gate-charge

Technology

Case

Collector-emitter-voltage

Gate-emitter-voltage

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