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B2M065120H

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This product is a unipolar N-MOSFET transistor made from SiC, rated for 1.2kV and 33A continuous current, with a maximum drain current of 85A and a power rating of 250W. It is designed for high-voltage applications requiring efficient performance.

SKU: 298946941806 Category:
Weight:
6.273g

$14.63

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pcs

22 in stock

Estimated delivery time: 7-14 days
* Please note that delivery times may vary based on supplier availability and shipping location.

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Packing Information:
  • Packing Detail: TB1, ST, , 30
Description

If you’re looking for a reliable and high-performance transistor solution, consider the N-MOSFET B2M065120H. This advanced silicon carbide (SiC) unipolar transistor is specifically engineered to handle impressive voltage and current levels, making it suitable for a variety of demanding applications. In this article, we’ll delve into the technical specifications, benefits, and applications of the B2M065120H, showcasing why it’s an excellent choice for engineers and technicians alike.

Understanding the N-MOSFET B2M065120H

The N-MOSFET B2M065120H represents a significant advancement in power electronics, capable of accommodating a maximum voltage of 1.2 kV and a continuous current of 33 A. This robust component is designed to excel not only in standard applications but also in high-stress environments.

Key Specifications

  • Type: N-MOSFET
  • Material: Silicon Carbide (SiC)
  • Maximum Voltage (Vds): 1.2 kV
  • Continuous Drain Current (Id): 33 A
  • Pulsed Drain Current (Idm): 85 A
  • Maximum Power Dissipation: 250 W

These specifications make the B2M065120H well-suited for power applications that demand high efficiency and durability.

The Advantages of Using SiC Technology

Silicon carbide (SiC) technology offers numerous benefits over traditional silicon-based components, particularly in high-voltage and high-current applications. Here are some of the primary advantages:

  • Higher Efficiency: SiC transistors minimize energy loss during operation, contributing to better overall system efficiency.
  • Greater Thermal Conductivity: SiC can operate at elevated temperatures without compromising performance, making it ideal for high-power applications.
  • Compact Design: The inherent properties of SiC allow for smaller packaging, saving space and weight in electronic designs.
  • Robustness: SiC devices demonstrate superior resistance to radiation and harsh conditions, extending their lifespan even in challenging environments.

Applications of the B2M065120H

The versatility of the B2M065120H N-MOSFET allows it to be effectively used in numerous applications. Here are some prevalent fields where this transistor is deployed:

  • Power Management Systems: Optimize energy efficiency in converters and inverters.
  • Renewable Energy: Connect and enhance the performance of solar inverter systems.
  • Electric Vehicles (EVs): Minimize losses in drive systems, electric motors, and battery management.
  • Industrial Automation: Enhance motor control and process automation systems.
  • Aerospace and Defense: Support high-reliability applications that require stringent specifications and resilience.

Why Choose the B2M065120H?

When selecting a transistor for your next project, choosing the B2M065120H can yield significant advantages in performance, efficiency, and cost-effectiveness. Here are compelling reasons to opt for this N-MOSFET:

  • High Performance: With its impressive ratings, the B2M065120H stands out as a high-performance option compared to standard silicon MOSFETs.
  • Long-Term Reliability: The durability of SiC technology ensures longevity and low maintenance for users.
  • Cost-Effective: Although SiC components may cost more upfront, their efficiency and longevity often translate to decreased total cost of ownership.

Final Thoughts

The N-MOSFET B2M065120H is not just a transistor; it’s a cutting-edge solution that meets the ever-increasing demands of modern electronics across various sectors. Its superior performance characteristics make it an essential component for engineers looking to enhance efficiency and durability in their designs. With robust specifications and wide-ranging applicability, the B2M065120H is poised to support the innovations of the future.

When considering the next step in your electronic projects or developments, think about integrating the B2M065120H into your design. Its unique properties and advantages will empower you to achieve higher performance and efficiency, paving the way for groundbreaking applications and technologies.

In summary, whether you’re involved in renewable energy applications, electric vehicles, or industrial automation, the N-MOSFET B2M065120H is your go-to solution for high voltage and high current needs. Embrace the future of power electronics with this high-performance transistor.

For more options on top-quality transistors, visit our N-Channel Transistors category.

Additional information
Weight 0.006273 kg
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