AS6C2008A-55TIN

Introducing the AS6C2008A-55TIN – a high-performance static random-access memory (SRAM) solution crafted to meet the demanding needs of modern digital applications. With a robust capacity of 2 megabits (2Mb), this versatile SRAM chip delivers reliability and speed in a compact form factor.

Product Overview

The AS6C2008A-55TIN is engineered for exceptional performance and efficiency, making it suitable for a wide array of applications, from industrial automation systems to consumer electronics. This SRAM features a memory configuration of 256k x 8 bits, effectively handling various data storage needs with ease.

Key Features

• Memory Size: 2Mb
• Memory Configuration: 256k x 8 bits
• Operating Voltage: 2.7 to 5.5V
• Access Time: 55ns
• Package Type: TSOP32

Performance Specifications

One of the hallmarks of the AS6C2008A-55TIN is its impressive access time of 55ns. This quick response time ensures that data can be read and written efficiently, making it ideal for applications where speed is critical. The device operates within a broad voltage range of 2.7V to 5.5V, providing flexibility in various circuit designs and ensuring stable operation under different voltage conditions.

Applications of the AS6C2008A-55TIN

The versatility of the AS6C2008A-55TIN allows for its use in multiple applications, including but not limited to:

• Embedded Systems
• Network Equipment
• Telecommunications Devices
• Consumer Electronics
• Industrial Control Units

Why Choose AS6C2008A-55TIN?

Choosing the AS6C2008A-55TIN means opting for high quality and performance. Here are several reasons why this SRAM chip stands out among its competitors:

• High Density: With its 2Mb capacity, it offers ample space for applications requiring significant memory.
• Fast Access Time: Its 55ns access time ensures quicker data retrieval and processing.
• Wide Voltage Range: Operating between 2.7 to 5.5 volts, it is suitable for various power supply designs.
• Compact Design: Housed in a TSOP32 package, it saves space on printed circuit boards (PCBs), ideal for compact applications.

Technical Details of the AS6C2008A-55TIN

When integrating the AS6C2008A-55TIN into your design, consider the following technical specifications:

Electrical Characteristics

• Supply Voltage (Vcc): 2.7V to 5.5V
• Input High Voltage (VIH): 2.0V (minimum)
• Input Low Voltage (VIL): 0.8V (maximum)
• Output High Voltage (VOH): Vcc – 0.2V (minimum)
• Output Low Voltage (VOL): 0.4V (maximum)

Functional Description

The AS6C2008A-55TIN features asynchronous read and write operations, facilitating simple interfacing with various microcontrollers and processors. Data can be accessed or written to without waiting for a clock signal, making it an efficient solution for real-time applications.

Benefits of Using SRAM

SRAM technology, like that utilized in the AS6C2008A-55TIN, comes with numerous benefits:

• Speed: SRAM provides faster access times compared to other memory types, such as DRAM, making it ideal for high-performance applications.
• Simplicity: SRAM does not require refresh cycles, simplifying circuit design and significantly reducing power consumption.
• Reliability: Since SRAM is non-volatile, it maintains data integrity even under varying environmental conditions.

Conclusion

The AS6C2008A-55TIN SRAM chip stands out as a top choice for designers and engineers seeking high-speed, reliable, and efficient memory solutions. With its impressive features, versatile applications, and robust design, it is the perfect match for your memory requirements. Whether you are developing cutting-edge consumer electronics or sophisticated industrial machines, the AS6C2008A-55TIN can help you achieve your goals with ease. Don’t settle for less; invest in the AS6C2008A-55TIN for optimal performance and reliability in your next project.

Explore more memory solutions like the AS6C2008A-55TIN in our SRAM category.