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The 1Mb SRAM memory is a 128kx8bit chip operating at voltages between 2.7V and 5.5V, with a speed of 55ns. It comes in a 32-pin SOP package with a width of 450 mils, making it suitable for various electronic applications.
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573 in stock
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573 in stock
- Packing Detail: RL1, ST, , 1000
Introducing the AS6C1008-55SINTR, a high-performance Static Random Access Memory (SRAM) chip that delivers exceptional speed and reliability for a wide range of electronic applications. As a key component in many modern devices, the AS6C1008-55SINTR is designed to meet the demanding requirements of today’s advanced technology.
Product Overview
The AS6C1008-55SINTR is a 1Mb SRAM featuring a storage capacity of 128k x 8 bits. Operating within a voltage range of 2.7 to 5.5 volts, this chip is well-suited for various systems and applications. Additionally, with a swift access time of 55 nanoseconds, the AS6C1008-55SINTR enables quick data retrieval and storage, making it an ideal choice for high-speed memory applications.
Key Features
- Memory Type: Static Random Access Memory (SRAM)
- Memory Capacity: 1Mb (128k x 8 bit)
- Voltage Range: 2.7V to 5.5V
- Access Time: 55ns
- Package Type: SOP32 (Small Outline Package, 450 mils)
Applications
The versatility of the AS6C1008-55SINTR makes it suitable for a variety of applications across different industries. Its high-speed access and reliability make it a popular choice for:
- Consumer electronics
- Networking hardware
- Industrial automation systems
- Telecommunication devices
- Medical equipment
- Automotive electronics
Benefits of Using the AS6C1008-55SINTR
By incorporating the AS6C1008-55SINTR into your designs, you can take advantage of numerous benefits:
- Fast Data Processing: The 55ns access time ensures swift read and write operations, enhancing the speed of data processing in your applications.
- Wide Voltage Compatibility: Operating between 2.7V and 5.5V, the AS6C1008-55SINTR is adaptable for a broad range of electronic environments.
- Compact Design: The SOP32 package contributes to space-saving designs, which can be particularly advantageous in compact devices and crowded circuit boards.
- Enhanced Reliability: As a SRAM, the AS6C1008-55SINTR offers reliable performance without the refresh requirements of DRAM, making it easier to manage in systems that require consistent data integrity.
Technical Specifications
For engineers and designers looking for in-depth specifications, here’s a detailed breakdown of the AS6C1008-55SINTR:
- Memory Architecture: Static RAM
- Flexibility: Supports both reading and writing operations
- Pin Count: 32 pins
- Temperature Range: Industrial and commercial grade options available
- Initialization: Easy setup procedure with no special requirements
Integration and Design Considerations
When integrating the AS6C1008-55SINTR into your device, consider the following:
- Power Supply Design: Ensure that the power supply remains within the specified voltage range to guarantee optimal performance and reliability.
- PCB Layout: Careful PCB layout is critical to minimize signal integrity problems and to maintain high-speed performance.
- Thermal Management: While the AS6C1008-55SINTR generates minimal heat, maintaining appropriate thermal conditions can enhance its longevity.
Conclusion
The AS6C1008-55SINTR is an excellent choice for applications requiring high-speed static memory. With its impressive specifications, including fast access time, broad voltage compatibility, and compact design, it is well-equipped to meet the high-performance demands of modern electronics.
Whether you’re designing consumer electronics, networking hardware, or industrial systems, using the AS6C1008-55SINTR can significantly enhance your products’ performance and reliability. For more information on the AS6C1008-55SINTR and to explore additional specifications and compatible products, please visit our SRAM category page.

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