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APT7M120B

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This N-MOSFET transistor features a unipolar design, capable of withstanding 1.2kV and 5A continuous current. With a maximum drain current of 28A and a power rating of 335W, it comes in a TO247-3 package, making it suitable for high-power applications.

SKU: 298936352395 Category:
Weight:
6.06g

$15.05

/

pcs

18 in stock

Estimated delivery time: 7-14 days
* Please note that delivery times may vary based on supplier availability and shipping location.

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Packing Information:
  • Packing Detail: TB1, ST, , 30
Description

The APT7M120B is a high-performance N-MOSFET transistor specially engineered for a variety of power applications. This component is celebrated for its reliability, high voltage threshold, and exceptional current handling capabilities. In this description, we delve into the features, applications, and technical specifications of the APT7M120B, making it a crucial component for both engineers and hobbyists.

What is the APT7M120B?

The APT7M120B is a unipolar Power Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) that primarily operates within the realm of power electronics. With a remarkable voltage rating of 1.2kV and a current rating of 5A, this transistor is crafted to efficiently manage high power levels. Its TO247-3 package significantly enhances thermal performance, ensuring effective heat dissipation.

Key Features of the APT7M120B

  • Voltage Rating: The APT7M120B provides a high voltage of 1.2kV, making it a superior choice for applications running at elevated voltages.
  • Current Handling: Boasting a continuous drain current of 5A and a maximum pulsed drain current of 28A, this MOSFET adeptly handles substantial power loads.
  • Power Rating: Featuring a maximum power dissipation of 335W, the APT7M120B ensures flexibility in power management across various applications.
  • Compact Design: The TO247-3 package is optimized for efficient heat dissipation, promoting stable performance even under demanding load conditions.
  • Fast Switching Speed: The design of the APT7M120B enables rapid switching, making it ideal for high-frequency applications.
  • Low On-State Resistance: This MOSFET provides a low on-resistance, minimizing power loss during operation, which is vital for energy-efficient designs.

Applications of the APT7M120B

The versatility of the APT7M120B makes it ideal for a broad array of applications, including but not limited to:

  • Power supplies and converters
  • Motor drives
  • Inverter circuits
  • Switching power supplies
  • High-voltage switch applications

Understanding the Technical Specifications of the APT7M120B

To fully appreciate the capabilities of the APT7M120B, it is crucial to grasp its technical specifications. Below are critical parameters:

  • Drain-Source Voltage (VDS): 1200V
  • Continuous Drain Current (ID): 5A
  • Pulsed Drain Current (IDM): 28A
  • Power Dissipation (PD): 335W
  • Gate-Source Voltage (VGS): ±20V
  • Thermal Resistance: Junction-to-Case – 0.5°C/W

Benefits of Using the APT7M120B

The APT7M120B transistor offers numerous advantages for your electronic projects:

  • High Efficiency: With a low on-state resistance, energy loss is greatly minimized, leading to cooler operation and prolonging the lifespan of electronic components.
  • Flexibility: Designed to support a variety of applications, this transistor easily adapts to different project configurations.
  • Reliability: Built to endure demanding electrical conditions, the APT7M120B guarantees consistent performance while reducing downtime in critical applications.
  • Cost-Effective: Enhancing efficiency and lowering thermal management needs can contribute to overall cost savings in power systems.

Installation and Usage of the APT7M120B

Integrating the APT7M120B into your projects necessitates a basic understanding of soldering and circuit assembly:

  • Heat Sink Requirements: Due to its power dissipation capabilities, employing a heat sink is recommended for optimal thermal management.
  • Pin Configuration: Familiarize yourself with the TO247-3 pin layout during installation to ensure proper connections.
  • Testing: Implement suitable testing procedures post-installation to guarantee correct function of the MOSFET before full-scale deployment.

Conclusion

In summary, the APT7M120B stands out as an exceptional choice for anyone engaged in power electronics. Its combination of high voltage and current capabilities, along with reliable performance and versatility, makes it an indispensable component for a myriad of applications. Whether you are developing industrial power systems, motor drives, or high-frequency switching circuits, the APT7M120B ensures you have a dependable component that meets rigorous standards.

Integrate the APT7M120B into your designs to experience unparalleled performance in your applications. With its remarkable specifications and benefits, it is indeed a prime choice for enhancing power management and integration within electronic systems.

For further exploration of similar components, visit our N-Channel Transistors category.

Additional information
Weight 0.00606 kg
Manufacturer

Case

Mounting

Drain-current

On-state-resistance

Type-of-transistor

Power-dissipation

Polarisation

Gate-charge

Technology

Kind-of-channel

Gate-source-voltage

Pulsed-drain-current

Drain-source-voltage

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