APT4M120K

Introducing the APT4M120K: A High-Performance N-MOSFET Transistor

If you are in search of a robust and efficient component for your high-voltage applications, look no further than the APT4M120K. This advanced N-channel Metal-Oxide-Semiconductor Field-Effect Transistor (N-MOSFET) is designed to meet the stringent requirements of modern electronic systems. With a breakdown voltage of 1.2kV and a maximum continuous drain current rated at 3A, the APT4M120K provides reliable performance in demanding environments.

Key Features of the APT4M120K

The APT4M120K stands out in the marketplace for its combination of power handling capabilities and operational efficiency. Below are its key features:

• Voltage Rating: 1.2 kV – This means that the APT4M120K can handle high voltage applications, ensuring safety and reliability.
• Continuous Drain Current: 3A – Ideal for most electronic circuits where current demand is moderate.
• Pulsed Drain Current: 15A – This feature is extremely beneficial for applications where current may spike temporarily.
• Power Dissipation: 225W – A high power dissipation capability makes the APT4M120K suitable for use in power applications.
• Package Type: TO-220-3 – A common and reliable package that ensures effective heat dissipation.

Technical Specifications of the APT4M120K

Understanding the technical specifications is crucial when choosing the right transistor for your application. Here are the details of the APT4M120K:

• Type: N-MOSFET
• Maximum Junction Temperature: 150°C
• Gate Threshold Voltage: 2V to 4V
• Drain-Source Breakdown Voltage (BVDSS): 1,200V
• Drain-Source On-Resistance (RDS(on)): Low on-resistance ensures minimal power loss during operation.

Applications of the APT4M120K

The versatility of the APT4M120K makes it suitable for a wide range of applications:

• Switching Power Supplies: Its high breakdown voltage and current handling make it perfect for use in switching power supplies.
• Motor Control: Ideal for controlling DC motors where higher currents are needed.
• Uninterruptible Power Supplies (UPS): Reliable performance under variable loads.
• Power Electronics Circuits: A crucial component in various power electronic circuits.
• High Voltage Applications: Its ability to withstand high voltage makes it favorable for electronic devices operating in high-voltage environments.

Benefits of Using the APT4M120K

The APT4M120K offers significant advantages for engineers and designers:

• Enhanced Reliability: Built to withstand high temperature and voltage conditions, guaranteeing long-term durability.
• Improved Efficiency: Low on-resistance reduces power loss, which translates to improved operational efficiency.
• Versatile Use: Suitable for a variety of applications, making it an ideal choice for different designs.
• Easy Integration: The TO-220-3 package simplifies integration with both cooling systems and printed circuit boards (PCBs).

Choosing the Right Transistor: Why the APT4M120K?

When selecting a transistor, performance parameters, thermal characteristics, and application requirements must be considered. The APT4M120K is uniquely engineered to fulfill the electronic demands of modern technologies. Its ability to handle high voltages and currents, coupled with its efficient thermal management, makes it an optimal selection for those seeking reliability and performance.

Conclusion

In the ever-evolving landscape of electronic component design, having a dependable and high-performance transistor is key to successful application development. The APT4M120K provides that reliability. Whether you are designing a new circuit or upgrading an existing system, the APT4M120K can be your trusted ally in delivering exceptional performance and efficiency in your electronics.

For engineers and designers alike, the APT4M120K represents high quality and reliable performance in challenging environments. Ensure to consider this MOSFET for your next project to experience its numerous benefits firsthand.

Explore more high-performance transistors in our N-Channel Transistors category.