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AOK60B65H1

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This IGBT transistor features a voltage rating of 650V and a current capacity of 60A, delivering up to 250W. It is housed in a TO247 package, with Eoff of 1.17mJ and Eon of 2.42mJ, making it suitable for various high-power applications.

SKU: 298935723627 Category:
Weight:
6.11g

$6.18

/

pcs

379 in stock

Estimated delivery time: 7-14 days
* Please note that delivery times may vary based on supplier availability and shipping location.

Quantity FromPrice Per Item
1$5.15
3$4.63
5$3.73
12$3.53
240$3.43

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379 in stock

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Packing Information:
  • Packing Detail: TB1, ST, , 30
Description

If you’re an electronics enthusiast or a professional working on innovative projects, the AOK60B65H1 is your ideal transistor solution. This Insulated Gate Bipolar Transistor (IGBT) is meticulously crafted for applications requiring high power and efficiency. With outstanding specifications of 650V, 60A, and 250W, the AOK60B65H1 stands out as a powerhouse in its category.

Understanding the AOK60B65H1 Transistor

The AOK60B65H1 is built on advanced technology that merges the optimal characteristics of both MOSFETs and BJTs, making it an exceptional choice for high-voltage applications. Here are some of its key features:

Key Features of the AOK60B65H1:

  • Type: Insulated Gate Bipolar Transistor (IGBT)
  • Voltage Rating: 650 Volts
  • Current Rating: 60 Amperes
  • Power Dissipation: 250 Watts
  • Package Type: TO-247 for efficient heat dissipation
  • Eoff: 1.17mJ for lower energy losses
  • Eon: 2.42mJ for improved switching conditions

Applications of the AOK60B65H1

The versatility of the AOK60B65H1 transistor makes it suitable for a wide range of applications, including but not limited to:

  • Switching Power Supplies
  • Motor Drives
  • Inverters for Renewable Energy Systems
  • Welding Equipment
  • UPS (Uninterruptible Power Supply)

Why Choose the AOK60B65H1?

When choosing a transistor, the performance and reliability of the AOK60B65H1 are exceptional for several reasons:

  • High Efficiency: The AOK60B65H1 IGBT’s low conduction losses make it ideal for high-performance applications.
  • Fast Switching: With Eon and Eoff values at 2.42mJ and 1.17mJ respectively, it allows for rapid switching, enhancing operational efficiency.
  • Robust Design: The TO-247 package enables excellent thermal management, ensuring the AOK60B65H1 can handle demanding industrial environments.
  • Proven Reliability: This IGBT is a trusted choice among engineers and designers worldwide, thanks to its consistent performance across various applications.

Technical Specifications

Here’s a detailed table of the technical specifications for the AOK60B65H1, highlighting its impressive capabilities:

Attribute Value
Type IGBT
Voltage Rating 650V
Current Rating 60A
Power Dissipation 250W
Package Type TO-247
Eoff 1.17mJ
Eon 2.42mJ

How to Integrate the AOK60B65H1 into Your Project

Integrating the AOK60B65H1 into your project requires a good understanding of its pin configuration and ensuring proper thermal management. Follow these steps for optimal integration:

Step-by-Step Integration Guide:

  1. Understand Pin Configuration: Familiarize yourself with the pinout of the TO-247 package.
  2. Thermal Design: Provide a suitable heat sink to manage thermal output.
  3. Establish Gate Drive Requirements: Calculate the appropriate gate drive voltage and current for optimal performance.
  4. Testing: After assembling your circuit, conduct tests to verify the AOK60B65H1 operates within specified limits.

Conclusion

The AOK60B65H1 is an exceptional choice for anyone looking to enhance their projects with a reliable, efficient, and powerful transistor. By utilizing its high voltage capability, robust design, and fast-switching characteristics, you can significantly improve the performance of various applications, from motor drives to power supplies.

Don’t miss out on the opportunity to bring your designs to life with the remarkable capabilities of the AOK60B65H1. Make this IGBT transistor a part of your project and experience the difference it can make in terms of efficiency and reliability. For more in-depth options, check out our collection of IGBT transistors.

Additional information
Weight 0.00611 kg
Manufacturer

Type-of-transistor

Collector-emitter-voltage

Collector-current

Power-dissipation

Case

Gate-emitter-voltage

Pulsed-collector-current

Mounting

Gate-charge

Kind-of-package

Turn-on-time

Turn-off-time

Collector-emitter-saturation-voltage

Turn-off-switching-energy

Turn-on-switching-energy

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