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AOD3N60

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This N-MOSFET transistor features a unipolar design with a voltage rating of 600V, a current capacity of 1.6A, and a power dissipation of 56.8W. Encased in a TO252 package, it is suitable for various electronic applications requiring reliable performance.

SKU: 298935681883 Category:
Weight:
0.395g

0,65 

/

pcs

2419 in stock

Estimated delivery time: 7-14 days
* Please note that delivery times may vary based on supplier availability and shipping location.

Quantity FromPrice Per Item
3$0.54
25$0.47
37$0.41
100$0.39
2500$0.38

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2419 in stock

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Packing Information:
  • Packing Detail: RL1, ST, , 2500
Description

Introducing the AOD3N60, a high-performance N-channel MOSFET designed to meet various electronic needs. Known for its reliability and efficiency, the AOD3N60 excels in high-voltage applications, making it an essential component for electrical engineers.

Overview of the AOD3N60

The AOD3N60 is a unipolar transistor that operates effectively within a voltage range of 600V and can handle a continuous current of 1.6A. With a maximum power dissipation of 56.8W, it is suitable for both low- and high-power applications. This device is ideal for power management circuits and can be utilized in a variety of electronic devices.

Specifications

  • Type: N-channel MOSFET
  • Voltage Rating: 600V
  • Current Rating: 1.6A
  • Power Dissipation: 56.8W
  • Package Type: TO252

Key Features

  • High Voltage Range: The AOD3N60 provides a significant advantage in high-voltage applications, making it ideal for power supply circuits.
  • Low Gate Drive Requirement: The N-MOSFET technology facilitates lower gate drive power, leading to enhanced efficiency.
  • Robust Thermal Performance: With its ability to dissipate up to 56.8W, the AOD3N60 can handle various thermal conditions while maintaining performance.
  • Compact Package: The TO252 package ensures that the AOD3N60 fits well into designs where space is a premium.

Applications

The versatility of the AOD3N60 makes it perfect for numerous applications, including:

  • Power Management Units
  • DC-DC Converters
  • Motor Control Drives
  • Switching Power Supplies
  • LED Drivers
  • Home Appliances

Understanding N-MOSFET Technology

N-MOSFETs, or N-channel Metal-Oxide-Semiconductor Field-Effect Transistors, are widely used in both analog and digital applications. The AOD3N60 represents the best of this technology, offering high efficiency and low on-state resistance. N-MOSFETs are known for their high-speed switching capabilities and their ability to drive larger currents, making them suitable for high-power applications.

Advantages of Using the AOD3N60

  • Enhanced Energy Efficiency: Utilizing the AOD3N60 can significantly reduce energy loss in electronic devices due to its low on-resistance and gate drive requirements.
  • Robust Design: With a reliable current and voltage rating, this device provides durability and longevity, even in demanding environments.
  • Cost-Effective Solution: As a unipolar device, the AOD3N60 can minimize the number of components required in a circuit, potentially lowering the overall system cost.

Installation and Usage Tips

When integrating the AOD3N60 into your project, consider the following tips for optimal performance:

  • Ensure proper heat sinking to maximize power dissipation capability.
  • Follow the recommended gate voltage levels for best performance.
  • Test the device in the application circuit under various load conditions to ensure that it meets the design requirements.

Conclusion

In summary, the AOD3N60 is a versatile N-channel MOSFET that offers high efficiency, thermal stability, and a broad range of applications. Whether you’re designing a power supply or working on complex control systems, the AOD3N60 should be your go-to component. Its robust specifications and features make it a valuable addition to any electrical engineer’s toolkit.

Explore more about the incredible capabilities of the AOD3N60 and see how it can enhance your electronic projects today! Additionally, visit our N-channel Transistors category for more related products.

Additional information
Weight 0,000395 kg
Manufacturer

Type-of-transistor

Polarisation

Drain-source-voltage

Drain-current

Power-dissipation

Case

Gate-source-voltage

On-state-resistance

Mounting

Gate-charge

Kind-of-channel

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