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This 0402 SMD inductor features a thin film design with an inductance of 3.8nH, a current rating of 410mA, and an equivalent series resistance of 450mΩ. It has a quality factor (Q) of 16 and a tolerance of ±0.1nH, making it suitable for high-frequency applications.
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8520 in stock
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8520 in stock
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Introducing the highly efficient AL02BT3N802 Inductor, crafted specifically for applications requiring compact components without compromising performance. This SMD (Surface Mount Device) inductor features a thin film design, ensuring it occupies minimal space on your printed circuit board (PCB) while delivering exceptional electrical characteristics.
For more options, please visit our complete range of SMD Inductors here.
Key Features of the AL02BT3N802 Inductor
- Size: 0402 (1.0 mm x 0.5 mm)
- Inductance: 3.8nH (nanohenries)
- Current Rating: 410mA (milliamps)
- DC Resistance: 450mΩ (milliohms)
- Quality Factor (Q): 16
- Tolerance: ±0.1nH
Why Choose the AL02BT3N802 Inductor?
The AL02BT3N802 Inductor is a robust choice for a variety of applications, including RF (Radio Frequency) circuits, high-frequency power conversion, and signal processing. Its small form factor and unique design make it ideal for use in smartphones, tablets, and wearables where space is at a premium.
Compact and Efficient Design
With its 0402 size, the AL02BT3N802 holds the key to miniaturization in electronic circuits. The thin film design not only offers a smaller footprint but also enhances inductor efficiency. Efficient inductors are essential for modern electronic devices where every square millimeter counts.
High Performance Ratings
The performance of the AL02BT3N802 is notable, featuring an inductance of 3.8nH. This low inductance value is perfect for applications that demand quick response times and high-speed switching. Additionally, the current rating of 410mA allows this inductor to handle significant power without overheating, making it extremely reliable in demanding environments.
Low DC Resistance
One of the standout specifications of the AL02BT3N802 is its low DC resistance of 450mΩ. Low resistance ensures minimal power loss, crucial in applications requiring sustained performance over long periods. This feature also contributes to the overall efficiency of the circuit in which it is integrated.
Quality Factor (Q) and Tolerance
The AL02BT3N802 boasts a quality factor (Q) of 16, indicating its ability to operate efficiently with minimal energy loss due to resistance. This high Q factor is particularly desirable in RF design and high-frequency applications where performance is critical.
Furthermore, the inductor offers a tight tolerance of ±0.1nH, ensuring consistent and reliable performance across various applications. Engineers will appreciate this reliability when designing for strict performance parameters.
Applications for the AL02BT3N802 Inductor
The versatility of the AL02BT3N802 makes it suitable for a wide range of applications:
- RF transceivers
- High-frequency amplifiers
- Signal filtering
- Power management circuits
- DC-DC converters
- Smartphone and tablet circuitry
- Wearable technology
- Telecommunication devices
Conclusion
In a world where electronic devices become smaller and more complex, the AL02BT3N802 Inductor stands out as a high-performance solution for engineers and product designers. Its compact size, low DC resistance, and impressive Q factor make it an ideal choice for a multitude of applications across different industries.
Choose the AL02BT3N802 Inductor for your next project and ensure that your designs maintain optimal performance while maximizing space efficiency. Whether you are building the next generation of mobile devices or advanced communication systems, the AL02BT3N802 is the right component for the job.

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