2SK1317-E

The 2SK1317-E is a high-performance N-MOSFET transistor specially designed for applications demanding reliability and high voltage handling. This transistor is an ideal choice for various electronic circuits and systems requiring efficient power switching. With an exceptional breakdown voltage of 1500V, the 2SK1317-E operates effectively in high-voltage environments.

Key Features of the 2SK1317-E

The 2SK1317-E N-MOSFET showcases several features that make it suitable for a wide range of applications:

• High Voltage Capability: With a maximum voltage rating of 1500V, the 2SK1317-E can handle high electrical stress without compromising performance.
• Current Handling: This transistor efficiently manages up to 2.5A of continuous current, making it effective for diverse power applications.
• Power Rating: The 2SK1317-E has a maximum power dissipation of 100W, allowing it to operate reliably in high-power circuits.
• TO3P Package: Encased in a TO3P package, this N-MOSFET offers excellent thermal management and easy integration into your circuit designs.
• Unipolar Device: As a unipolar device, the 2SK1317-E leverages the advantages of MOSFET technology, ensuring fast switching speeds and lower energy losses.

Applications of the 2SK1317-E

The versatility and efficiency of the 2SK1317-E make it suitable for various applications, including but not limited to:

• Power Supplies: Ideal for high-voltage power supply circuits, maintaining stability and reliability under heavy loads.
• Motor Control: Facilitates effective motor drive systems, where high switching speeds and power efficiency are crucial.
• Inverters: Ensures effective functioning in inverter circuits, essential for renewable energy systems and various industrial applications.
• Switching Regulators: The 2SK1317-E is suitable for switching regulators, contributing to the efficient management of power conversion in electronic devices.
• Lighting Control: Particularly useful in high-intensity discharge lighting setups, where reliable switching and durability are key.

Benefits of Using the 2SK1317-E

The use of the 2SK1317-E brings several benefits to your electronic design:

• High Efficiency: The design of the 2SK1317-E minimizes power losses, leading to lower heat generation and improved overall system efficiency.
• Longevity: With its robust construction and high-rated performance, incorporating the 2SK1317-E extends the lifespan of your electronic devices.
• Temperature Stability: This MOSFET is designed to perform optimally across a wide range of temperatures, ensuring reliable operation in various environmental conditions.
• Reduced Switching Losses: Due to its inherent switching characteristics, the 2SK1317-E minimizes losses during transitions, enhancing the efficiency of circuit operations.

Technical Specifications of the 2SK1317-E

For engineers and designers, understanding the technical specifications of the 2SK1317-E is crucial for effective application:

• Type: N-MOSFET
• Maximum V_DS (Drain-Source Voltage): 1500V
• Maximum I_D (Continuous Drain Current): 2.5A
• Maximum P_D (Power Dissipation): 100W
• Package Type: TO3P
• Operating Temperature Range: -55°C to +150°C
• Gate Threshold Voltage: Typically around 2-4V

Conclusion

In summary, the 2SK1317-E is a high-quality N-MOSFET that stands out in the realm of unipolar transistors. Its impressive specifications and versatility make it a preferred choice for engineers and designers requiring efficient switching and high voltage capabilities. Whether used in power electronics, motor control systems, or renewable energy applications, the 2SK1317-E delivers unmatched performance and reliability. Upgrade your project with the 2SK1317-E and experience enhanced efficiency and longevity in your designs. For more options, check our range of N-Channel Transistors.