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2N7002DWH6327XTSA1

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This product is a dual N-MOSFET transistor featuring unipolar technology. It operates at 60V with a current rating of 0.3A and a power dissipation of 0.5W. It is packaged in a PG-SOT-363 format, suitable for various electronic applications.

SKU: 298883887823 Category:
Weight:
1.9kg

$0.17

/

pcs

23677 in stock

Estimated delivery time: 7-14 days
* Please note that delivery times may vary based on supplier availability and shipping location.

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Packing Information:
  • Packing Detail: RL1, ST, , 3000
Description

Introducing the 2N7002DWH6327XTSA1, an exceptional N-channel MOSFET designed to meet a variety of electronic needs. This powerful transistor operates within a voltage range of up to 60V and delivers a current of 0.3A, making it a reliable choice for applications requiring a unipolar switching device.

Key Features of the 2N7002DWH6327XTSA1

The 2N7002DWH6327XTSA1 boasts a robust set of features that set it apart in the marketplace:

  • N-MOSFET Configuration: This transistor utilizes N-channel technology, providing superior efficiency for switching and amplifying signals.
  • Voltage Rating: With a maximum voltage of 60V, the 2N7002DWH6327XTSA1 is ideal for various high-voltage applications.
  • Current Handling: A continuous current rating of 0.3A enables this device to manage moderate loads effectively.
  • Power Dissipation: The 2N7002DWH6327XTSA1 can handle up to 0.5W of power dissipation, ensuring stable operation under load.
  • Package Type: Housed in the PG-SOT-363 package, the 2N7002DWH6327XTSA1 is compact, facilitating easy integration on PCBs in space-constrained designs.

Applications of the 2N7002DWH6327XTSA1

The versatility of the 2N7002DWH6327XTSA1 makes it an ideal choice for numerous applications, including:

  • Switching Regulators: Its fast-switching capabilities make it suitable for various power supply circuits.
  • Signal Processing: Use as an amplifier or switch in RF circuits or audio applications to boost signal strength.
  • LED Drivers: Effectively control LED lighting by functioning as a switch for on/off cycles or dimming functions.
  • Load Switching: Handle the switching of inductive or resistive loads in both consumer electronics and industrial applications.

Performance Characteristics

The 2N7002DWH6327XTSA1 is characterized by its impressive performance metrics:

  • Low Gate Threshold Voltage: This feature allows for effective operation in low-voltage applications while minimizing power consumption.
  • Fast Switching Speed: The ability to switch quickly between on and off states enhances overall circuit efficiency.
  • Rugged Reliability: Designed to withstand harsh conditions, the 2N7002DWH6327XTSA1 ensures long-lasting performance in demanding environments.

Installation and Usage Guidelines

To maximize the performance of the 2N7002DWH6327XTSA1, it is essential to adhere to the following installation and usage principles:

  • PCB Mounting: Ensure the transistor is securely mounted on the PCB to avoid physical damage and ensure optimal electrical contact.
  • Thermal Management: Due to its power dissipation capabilities, appropriate heat sinks or cooling mechanisms should be employed in high-power applications.
  • Gate Drive Voltage: Confirm gate voltage remains within the specified range for effective on/off states without damaging the component.

Conclusion

The 2N7002DWH6327XTSA1 is an excellent choice for engineers and designers seeking a reliable, efficient, and versatile N-channel MOSFET. With robust specifications and applications spanning various industries, from consumer electronics to industrial machinery, this component guarantees performance while facilitating seamless integration into your designs. Whether looking to enhance switching capabilities or optimize power management solutions, the 2N7002DWH6327XTSA1 stands out as a premier option that will meet and exceed expectations.

Invest in the 2N7002DWH6327XTSA1 for your next project and experience the remarkable difference it can make in performance and efficiency. Explore its full potential today! For more options, visit our transistors category page.

Additional information
Weight 1.9-5 kg
Manufacturer

Type-of-transistor

Technology

Polarisation

Drain-source-voltage

Drain-current

Power-dissipation

Case

Gate-source-voltage

On-state-resistance

Mounting

Kind-of-channel

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